Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2009-10-07
2011-12-20
Li, Meiya (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257SE23149, C257SE21498, C438S132000, C438S215000, C438S281000, C438S333000, C438S467000, C438S601000, C337S251000, C337S142000, C337S159000, C337S292000
Reexamination Certificate
active
08080861
ABSTRACT:
A semiconductor device includes an electric fuse and first and second large area wirings for applying a voltage to the electric fuse. The electric fuse includes a fuse unit which includes an upper-layer fuse wiring, a lower-layer fuse wiring, and a via connecting the upper-layer fuse wiring and the lower-layer fuse wiring, an upper-layer lead-out wiring which connects the upper-layer fuse wiring and the first large area wiring and has a bent pattern, and a lower-layer lead-out wiring which connects the lower-layer fuse wiring and the second large area wiring and has a bent pattern.
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Chinese Office Action dated Mar. 15, 2011, in the English language.
Kubota Yoshitaka
Takaoka Hiromichi
Tsuda Hiroshi
Li Meiya
McGinn Intellectual Property Law Group PLLC
Renesas Electronics Corporation
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