Semiconductor device

Details Semiconductor device Semiconductor device

2009-02-13

2011-10-04

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S192000, C257S192000, C257S194000, C257SE29031

Reexamination Certificate

active

08030660

ABSTRACT:
A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.

REFERENCES:
patent: 2007/0254431 (2007-11-01), Saito et al.
patent: 2007/0295993 (2007-12-01), Chen et al.
patent: 2008/0023706 (2008-01-01), Saito et al.
patent: 2008/0116486 (2008-05-01), Saito et al.
patent: 2008/0277692 (2008-11-01), Saito et al.
patent: 2005-244072 (2005-09-01), None
patent: 2006-032650 (2006-02-01), None
patent: 2007-294528 (2007-11-01), None
Y. Cai, et al.; “High-Performance-Enhancement-Mode AlGaN/GaN HEMTs Using Flouride-Based Plasma Treatment”; IEEE Electron Device Letters, vol. 26, No. 7, pp. 435-437, 2005.

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