Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-30

2011-10-18

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S195000, C257SE29246

Reexamination Certificate

active

08039871

ABSTRACT:
A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially formed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being a compound semiconductor; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The dopant impurity concentration profile in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer. The channel layer has fixed sheet dopant impurity concentration, and the top surface of the channel layer has a dopant concentration in a range from 5.0×1017cm−3to 2.0×1018cm−3.

REFERENCES:
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Minasian, R. A.,“Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series Representation”,IEEE Transactions on Microwave Theory and Techniques, Mtt-28(1):1-8 (1980).
Pucel, R. A., “Profile Design for Distortion Reduction in Microwave Field—Effect Transistors”Electronics Letters, 14(6):204-206 (1978).
Inoue, K., et al., “A High Gain L-band GaAs FET Technology for 28V Operation”IEEE MTS-S Digest, pp. 821-824 (2004).

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