Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-10-04
2011-10-18
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S682000, C257S686000, C257S778000, C257SE23031, C257SE25013
Reexamination Certificate
active
08039969
ABSTRACT:
A semiconductor device1includes a semiconductor chip10(first semiconductor chip), a semiconductor chip20(second semiconductor chip) and a seal ring30. The semiconductor chip20is provided on a surface S1of the semiconductor chip10so as to be spaced apart from the semiconductor chip10with a predetermined spacing therebetween. A seal ring30is interposed between the semiconductor chip10and the semiconductor chip20. An internal region, which is an inner region of the seal ring30, and an external region, which is an outer region of the seal ring30, are provided between the semiconductor chip10and the semiconductor chip20.
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Japanese Office Action dated Jul. 5, 2011 (with an English translation).
Gumedzoe Peniel M
Lee Eugene
McGinn IP Law Group PLLC
NEC Electronics Corporation
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