Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1991-08-01
1993-09-21
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 83, 257223, H01L 2348, H01L 2714
Patent
active
052471918
ABSTRACT:
A semiconductor device. A depression is formed in an insulating portion of a substrate and an electric lead is formed in the depression so that at least a portion of the electric lead is buried in the substrate. A semiconductor device is formed on the substrate and connected to the electric lead. The electric lead may be an extension of a source electrode, a drain electrode, or a gate electrode of the semiconductor device. Also, a gate electrode, a source electrode, or a drain electrode may be buried in a substrate.
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Mase Akira
Yamazaki Shunpei
LaRoche Eugene R.
Nguyen Viet Q.
Semiconductor Energy Laboratory Co,. Ltd.
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