Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE27001

Reexamination Certificate

active

08035188

ABSTRACT:
Plural I/O cells (14) having electrode pads for wire bonding (13) are disposed with spaces (55) between them in the vicinity of a corner of an I/O region (11) of a semiconductor substrate (10), and power supply separation cells (16) not to be wire bonded, on which ESD (electrostatic discharge) protection circuits (4) having ESD protection transistors are amounted, are disposed between the respective I/O cells (14), whereby the chip size is reduced upon consideration of layout of the electrode pads.

REFERENCES:
patent: 5045919 (1991-09-01), Nagaoka
patent: 5300796 (1994-04-01), Shintani
patent: 5404099 (1995-04-01), Sahara
patent: 7061263 (2006-06-01), Ong
patent: 2003/0173667 (2003-09-01), Yong et al.
patent: 2003/0222274 (2003-12-01), Shiina
patent: 1-112750 (1989-05-01), None
patent: 2-10854 (1990-01-01), None
patent: 3-99445 (1991-04-01), None
patent: 5-291368 (1993-11-01), None
patent: 9-8141 (1997-01-01), None
patent: 09008141 (1997-01-01), None
patent: 10-65103 (1998-03-01), None
patent: 10065103 (1998-03-01), None
patent: 10065103 (1998-03-01), None
patent: 2000-31223 (2000-01-01), None
patent: 2003-248704 (2003-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4290239

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.