Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2005-05-30
2011-10-11
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257SE27001
Reexamination Certificate
active
08035188
ABSTRACT:
Plural I/O cells (14) having electrode pads for wire bonding (13) are disposed with spaces (55) between them in the vicinity of a corner of an I/O region (11) of a semiconductor substrate (10), and power supply separation cells (16) not to be wire bonded, on which ESD (electrostatic discharge) protection circuits (4) having ESD protection transistors are amounted, are disposed between the respective I/O cells (14), whereby the chip size is reduced upon consideration of layout of the electrode pads.
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Hirofuji Masanori
Segawa Hiroaki
McDermott Will & Emery LLP
Niesz Jamie C
Panasonic Corporation
Smith Zandra
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