Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-02

2011-11-29

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S155000, C257S194000, C257S195000, C257S267000, C257S280000, C257S392000, C257SE27061, C257SE27068, C257SE29317

Reexamination Certificate

active

08067788

ABSTRACT:
A semiconductor device includes a substrate common to a first field effect transistor and a second field effect transistor, a channel layer of a first conductivity type formed on the substrate and common to the first and second field effect transistors, a an upper compound semiconductor layer formed on the channel layer and common to the first and second field effect transistors, a compound semiconductor region of a second conductivity type formed in the same layer as the upper compound semiconductor layer, a gate electrode of the first field effect transistor in ohmic contact with the compound semiconductor region, and a gate electrode of the second field effect transistor in Schottky contact with the upper compound semiconductor layer.

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