Semiconductor device

Details Semiconductor device Semiconductor device

2010-09-20

2011-11-22

Stark, Jarrett (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S141000, C257SE29199

Reexamination Certificate

active

08063418

ABSTRACT:
In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.

REFERENCES:
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patent: 5559347 (1996-09-01), Yamazaki et al.
patent: 5635823 (1997-06-01), Murakami et al.
patent: 7759696 (2010-07-01), Kaneko et al.
patent: 07-297387 (1995-11-01), None
patent: 09-260592 (1997-10-01), None

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