Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays

Reexamination Certificate

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Details

C257S288000, C257S368000, C257S390000, C257S401000, C257S405000, C257SE25010, C257SE25002, C257SE25005

Reexamination Certificate

active

08039873

ABSTRACT:
A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.

REFERENCES:
patent: 5406104 (1995-04-01), Hirota et al.
patent: 6134424 (2000-10-01), Nishihori et al.
patent: 6479905 (2002-11-01), Song
patent: 6750517 (2004-06-01), Ker et al.
patent: 2005/0189595 (2005-09-01), Okamoto et al.
patent: 2006/0113533 (2006-06-01), Tamaki et al.
patent: 2008/0061871 (2008-03-01), Abe et al.
patent: 2008/0238550 (2008-10-01), Sasaki et al.
patent: 2008/0258815 (2008-10-01), Abe et al.
patent: 2009/0121291 (2009-05-01), Anderson et al.
patent: 2009/0243725 (2009-10-01), Abe et al.
patent: 2000-332568 (2000-11-01), None
patent: 2007-60616 (2007-03-01), None
U.S. Appl. No. 12/873,788, filed Sep. 1, 2010, Abe et al.

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