Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2008-11-24
2011-10-18
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S288000, C257S368000, C257S390000, C257S401000, C257S405000, C257SE25010, C257SE25002, C257SE25005
Reexamination Certificate
active
08039873
ABSTRACT:
A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.
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Abe Kazuhide
Itaya Kazuhiko
Sasaki Tadahiro
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sefer A.
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