Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-08-27
2011-11-08
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S021000, C257SE31093, C257SE31033
Reexamination Certificate
active
08053758
ABSTRACT:
A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.
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Honda Hiroto
Masunishi Kei
Murai Shinji
Nishi Yoshifumi
Saitoh Masumi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Sandvik Benjamin
Schoenholtz Joseph
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