Semiconductor device

Details Semiconductor device Semiconductor device

2009-06-08

2011-10-18

Vu, Bao Q (Department: 2838)

Electric power conversion systems

Current conversion

Integrated circuit

C363S146000, C363S144000, C323S282000

Reexamination Certificate

active

08040708

ABSTRACT:
The reliability of a semiconductor device is improved.A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die pad7D2, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.

REFERENCES:
patent: 4990976 (1991-02-01), Hattori
patent: 6316922 (2001-11-01), Sugahara et al.
patent: 6700793 (2004-03-01), Takagawa et al.
patent: 2007/0228534 (2007-10-01), Uno et al.
patent: 2007-266218 (2007-10-01), None

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