Semiconductor device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 29, 357 41, 357 23, 357 52, 357 49, 357 72, 365149, H01L 2504, H01L 2328, H01L 2934, H01L 2712

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active

044815263

ABSTRACT:
A semiconductor device comprising memory circuits coated with a resinous film for shielding these circuits from the radioactive rays formed in substrate material. The resinous film is divided into a plurality of portions which are separated from one another and further coats at least memory cells and sense amplifiers. In one of the embodiments a part of the resinous film is removed at the portion of the chip other than said memory cells and sense amplifiers.

REFERENCES:
Kulow et al., IBM Tech. Dis. Bull., vol. 22, No. 12, May 1980, pp. 5367-5368, "Enhanced . . . Process".
Electronics, Sep. 25, 1980, pp. 39-40, Posa, ed.
IBM Tech. Disc. Bull., vol. 22, No. 4, Sep. 1979, p. 1398, W. C. Ward, "Alpha particle shield".
Electronics, Sep. 11, 1980, pp. 41-42.
Electronics, Jun. 8, 1978, pp. 42-43.
Electronics, Jul. 31, 1980, pp. 103-106, Katto et al.
Electronics, Jul. 31, 1980, p. 33.
IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, pp. 1460-1461, New York (USA); J. A. Brody et al.: "Storage and logic errors in dynamic memory devices due to innate radio-active materials in packaging and wafer", EPC Search Report dated Mar. 30, 1984.

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