Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2009-02-13
2011-10-25
Lebentritt, Michael (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S780000, C257S779000
Reexamination Certificate
active
08044521
ABSTRACT:
An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device includes a semiconductor chip provided on a lead frame, which are encapsulated with an encapsulating resin. Lead frames are provided in both sides of the lead frame. A portion of the lead frame is encapsulated with the encapsulating resin to function as an inner lead. The encapsulating resin is composed of a resin composition that contains substantially no halogen. Further, an exposed portion of the Al pad provided in the semiconductor chip is electrically connected to the inner lead via the AuPd wire.
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Machine Translation of JP-10303239.
Kato Tomoki
Ohta Mitsuru
Foley & Lardner LLP
Lebentritt Michael
Renesas Electronics Corporation
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