Semiconductor device

Details Semiconductor device Semiconductor device

2008-06-03

2011-11-01

Stultz, Jessica (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C257S022000

Reexamination Certificate

active

08050305

ABSTRACT:
A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0<x1<1, 0≦x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Bex4Mgx5Znx6Te (0<x4<1, 0<x5<1, 0≦x6<1, x4+x5+x6=1).

REFERENCES:
patent: 6399473 (2002-06-01), Fischer et al.
Che et al., “Visible Light Emitting Diode with ZnCdSe/BeZnTe Superlattices as an Active Layer and MgSe/BeZnTe Superlattices as a p-Cladding Layer”, 2002, Phys. Stat. Sol. (b), 229, No. 2, 1001-1004.

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