Semiconductor device

Details Semiconductor device Semiconductor device

2010-09-14

2011-12-27

Dang, Trung Q (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Point contact device

C257S774000, C257S776000, C257SE45002

Reexamination Certificate

active

08084768

ABSTRACT:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.

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Japanese Patent Office issued a Japanese Office Action dated Mar. 9, 2009, Application No. 2004-199662.

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