Semiconductor device

Details Semiconductor device Semiconductor device

2007-03-28

2011-10-25

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S104000, C257S167000, C257S183000, C257S194000, C257S317000, C257S480000, C257S551000, C257S603000, C257SE29339, C257SE29338, C257SE33034, C438S167000, C438S317000

Reexamination Certificate

active

08044485

ABSTRACT:
A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction type, or combined type thereof having a main conduction pathway in the horizontal direction in a conductive layer with unit anode portions and unit cathode electrodes being integrated adjacently to each other in the horizontal direction. The conductive layer is preferably formed by depositing a group-III nitride layer and generating a two-dimensional electron gas layer on the interface. Forming the conductive layer of the group-III nitride having high breakdown field allows the breakdown voltage to be kept high while the gap between electrodes is narrow, which achieves a semiconductor device having high output current per chip area. Further, an electrode pad layer provided on an insulation protecting layer relieves electric field concentration at a junction of each unit anode portion and each unit cathode electrode, which achieves higher breakdown voltage.

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