Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2010-01-27
2011-11-08
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S778000
Reexamination Certificate
active
08053908
ABSTRACT:
A novel structure capable of reducing the stress in the insulating layer in the semiconductor element and thereby securing reliability is provided. When the semiconductor element and the substrate are connected with a solder, the stress generated in the insulating layer is reduced by placing a spherical core made of a material having a greater rigidity inside the solder and satisfying the following inequalities: 1 GPa<(Young's modulus of a encapsulation resin)<30 GPa, 20 ppm/k<(linear coefficient of expansion of the encapsulation resin)<200 ppm/k, and 10 MPa<(yield stress of the solder at room temperature)<30 MPa. At the time of connection, the thickness of the solder to be placed between the land on the surface of the semiconductor element and the core is adjusted to 1/10 or less of the terminal pitch.
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Takayoshi Kashiwamura et al.; Optimization of nonlinear problem in Taguchi's method; Asakura Publishing Co., Ltd.
Chiwata Nobuhiko
Itabashi Takeyuki
Tanie Hisashi
Wakano Motoki
Antonelli, Terry Stout & Kraus, LLP.
Clark S. V.
Hitachi Metals Ltd.
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