Semiconductor device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 234, 357 43, 437 6, 437 40, 437 59, H01L 2702

Patent

active

050652125

ABSTRACT:
There is a semiconductor device in which an n-type layer formed on a p.sup.+ -type substrate is divided into first and second device forming regions by an isolation region and drive circuit devices and an output circuit device are respectively formed in these first and second device forming regions. The output circuit device is a conductivity modulated MOS transistor having the p.sup.+ -type substrate as a drain and the second device forming regoin as a high resistance region whose conductivity is modulated.

REFERENCES:
patent: 4224634 (1980-09-01), Svedberg
patent: 4364073 (1982-12-01), Becke et al.
patent: 4417385 (1983-11-01), Temple
patent: 4477310 (1984-10-01), Park et al.
patent: 4543592 (1985-09-01), Itsumi et al.
patent: 4546370 (1985-10-01), Curran
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4659421 (1987-06-01), Jewett
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4887142 (1989-12-01), Bertotti et al.
patent: 4928159 (1990-05-01), Mihara et al.
Wrathall et al., "Integrated Circuits for the Control of High Power", IEDM, pp. 408-411, 1983.
A. Goodman et al., "Improved COMFETS", 1983 IEDM, Conf. Proc., pp. 79-82.
Electronic Design, vol. 30, No. 7, Mar. 31, 1982, pp. 69-77; T. E. Ruggles et al.: "Mixed Process Puts High Power Under Fine Control".
IEEE Transactions on Electron Devices, vol. ED-30, No 12, Dec. 1983, pp. 1785-1791; T. Fukushima et al.; "An Advanced SVG Technology for 64 k Junction-Shorting PROM's ".
New Electronics, vol. 17, No. 4, Feb. 21, 1984, pp. 58, 59; P. Alois: "The Power Integrated Circuit".
Electronic Design, vol. 33, No. 4, Feb. 21, 1985, pp. 191-194, 196, 198; W. Schultz et al.: "Mixed MOS Devices Unite in a Switch Chip that Links Power with Smarts".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1015947

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.