Semiconductor device

Details Semiconductor device Semiconductor device

2009-02-10

2010-11-09

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S780000, C257SE29089

Reexamination Certificate

active

07829919

ABSTRACT:
A semiconductor device which can prevent peeling off of a gate electrode is provided. The semiconductor device has GaN buffer layer12formed on substrate11, undoped AlGaN layer13formed on this buffer layer12, drain electrode16and source electrode17formed separately on undoped AlGaN layer13, which form ohmic junctions with undoped AlGaN layer13. Between drain electrode16and source electrode17, insulating layer20which has opening19is formed, and metal film21is formed on a surface of insulating layer2. Gate electrode18which forms a Schottky barrier junction with undoped AlGaN layer13is formed in opening19, and gate electrode18adheres to metal film21.

REFERENCES:
patent: 04-91438 (1992-03-01), None
patent: 04-223342 (1992-08-01), None
patent: 5-299638 (1993-11-01), None
patent: 10-178189 (1998-06-01), None
patent: 11-186292 (1999-07-01), None
patent: 11-265898 (1999-09-01), None
patent: 2002-222817 (2002-08-01), None
patent: 2004-087587 (2004-03-01), None
patent: 2004-247709 (2004-09-01), None
patent: 2005-322811 (2005-11-01), None
patent: 2007-250792 (2007-09-01), None
patent: 2008-306027 (2008-12-01), None
Japanese Office Action, 2008-092706, mail date Jun. 8, 2010 5 pages.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4244598