Semiconductor device

Details Semiconductor device Semiconductor device

1990-10-17

1991-08-20

Prenty, Mark

357 4, 357 54, H01L 2702, H01L 2712, H01L 2934

Patent

active

050418971

ABSTRACT:
A semiconductor device has a fuse element formed on an insulating substrate, and a first insulating layer formed on the substrate and covering the fuse element. Further insulation on the first insulating layer nitride has an opening exposing the region of the first insulating layer above said fuse.

REFERENCES:
patent: 4428066 (1984-01-01), Kihara et al.
patent: 4536949 (1985-08-01), Takayama et al.

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