Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular chip input/output means
Reexamination Certificate
2007-10-25
2010-06-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular chip input/output means
C257S202000, C257S204000, C257S206000, C257S339000, C257S341000, C257S376000, C257S401000, C257S409000, C257S487000
Reexamination Certificate
active
07741659
ABSTRACT:
A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.
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Chen Jung-Ching
Wang Shyan-Yhu
Wu Shang-Chi
Yang Ching-Ho
Pham Long
Shih Chun-Ming
United Microelectronics Corp.
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