Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular chip input/output means

Reexamination Certificate

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Details

C257S202000, C257S204000, C257S206000, C257S339000, C257S341000, C257S376000, C257S401000, C257S409000, C257S487000

Reexamination Certificate

active

07741659

ABSTRACT:
A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.

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