Semiconductor device

Details Semiconductor device Semiconductor device

2006-03-30

2010-06-15

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257SE27040

Reexamination Certificate

active

07737523

ABSTRACT:
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.

REFERENCES:
patent: 4027325 (1977-05-01), Genesi
patent: 4451839 (1984-05-01), Nelson
patent: 4613887 (1986-09-01), Fukuda et al.
patent: 5101244 (1992-03-01), Mori et al.
patent: 5468984 (1995-11-01), Efland et al.
patent: 5545909 (1996-08-01), Williams et al.
patent: 5552625 (1996-09-01), Murakami et al.
patent: 5770886 (1998-06-01), Rao et al.
patent: 5982015 (1999-11-01), Hirayama et al.
patent: 6060752 (2000-05-01), Williams
patent: 6207484 (2001-03-01), Kim et al.
patent: 6693327 (2004-02-01), Priefert et al.
patent: 2002/0079554 (2002-06-01), Okawa et al.
patent: 2002/0190338 (2002-12-01), Skocki
patent: 2003/0060031 (2003-03-01), Asano et al.
patent: 2005/0280114 (2005-12-01), Singh
patent: 2006/0220166 (2006-10-01), Kikuchi et al.
patent: 2006/0244050 (2006-11-01), Sudou
patent: 2006/0244091 (2006-11-01), Kikuchi et al.
patent: 2008/0079110 (2008-04-01), Kikuchi et al.
patent: 2008/0164556 (2008-07-01), Kikuchi et al.
patent: 0450306 (1991-10-01), None
patent: 08-107222 (1996-04-01), None
patent: 08-130317 (1996-05-01), None
patent: 09-121062 (1997-05-01), None
patent: 2002-314099 (2002-10-01), None
patent: 2006-186392 (2006-07-01), None
Office action, mailed May 25, 2007 in copending U.S. Appl. No. 11/395,890.
Office action, mailed Dec. 20, 2007 in copending U.S. Appl. No. 11/395,890.
Office action, mailed May 28, 2008 in copending U.S. Appl. No. 11/395,890.
Office Action mailed Jan. 13, 2009, issued in copending U.S. Appl. No. 11/395,890.
Perez, R., et al., “Analysis of 1.2kV JBS Rectifiers Fabricated in 4H-SiC,” Semiconductor Science and Technology, May 5, 2006, pp. 670-676, 21:5, IOP Publishing Ltd., UK.
European Search Report, Oct. 10, 2008.
Chinese Office Action, Mar. 4, 2009.
Korean Office action mailed Jul. 14, 2009.
Office action issued in related U.S. Appl. No. 11/862,585, dated Jul. 9, 2009.

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