Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With dam or vent for encapsulant

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S787000, C257SE23101, C438S106000

Reexamination Certificate

active

07825498

ABSTRACT:
A semiconductor device according to the present invention includes an island provided on one surface of a resin substrate, an external terminal provided on the other surface of the substrate, a thermal pad provided on the other surface of the substrate in opposed relation to the island, a heat conduction portion extending through the substrate from the one surface to the other surface to connect the island to the thermal pad in a thermally conductive manner, and a solder resist portion provided on the other surface of the substrate and having a heat dissipation opening which defines a gap with respect to an outer periphery of the thermal pad and a terminal opening which exposes the external terminal.

REFERENCES:
patent: 6038137 (2000-03-01), Bhatt et al.
patent: 7126210 (2006-10-01), Chiu et al.
patent: 2003/0052420 (2003-03-01), Suzuki et al.
patent: 2003/0057534 (2003-03-01), Ho et al.
patent: 2004/0212051 (2004-10-01), Zhao et al.
patent: 2005/0186704 (2005-08-01), Yee et al.
patent: 11-154717 (1999-06-01), None
patent: 2001-181563 (2001-07-01), None
patent: 06-339596 (2005-06-01), None
patent: 6339596 (2006-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4236617

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.