Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-03-19
2010-10-26
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S466000, C257S774000, C257SE29013, C257SE23002, C257SE27130
Reexamination Certificate
active
07821092
ABSTRACT:
An open portion is provided to an interlayer insulation film so as to correspond to a photoreceptor part of an optical detection device. A partition wall for surrounding the open portion (120) is formed by a metal material inside a wiring structure layer (90) along the boundary between the photoreceptor part (4) and a circuit part (6). The partition wall is formed by a contact structure having a multi-level structure with respect to a separation region (74) disposed on the external periphery of the photoreceptor part (4). The partition wall prevents moisture absorption and light penetration from the wall surface of the open portion, and suppresses wiring degradation or fluctuation of the characteristics of the circuit elements on the periphery of the photoreceptor part.
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patent: 6376871 (2002-04-01), Arai
patent: 6412786 (2002-07-01), Pan
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2007/0072326 (2007-03-01), Zheng et al.
patent: 2007/0194396 (2007-08-01), Nomura
patent: A-10-050966 (1998-02-01), None
patent: A-2001-060713 (2001-03-01), None
Ho Tu-Tu V
Oliff & Berridg,e PLC
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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