Semiconductor device

Details Semiconductor device Semiconductor device

2008-03-26

2010-12-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257SE23010

Reexamination Certificate

active

07855453

ABSTRACT:
Provided is a semiconductor device in which a high concentration n type impurity region to be a conductive path and a drain electrode are disposed in an outer circumferential end of the chip to be an inactive region as a device region. Thereby, an up-drain structure is obtained without reducing the device region or without increasing the size of a semiconductor chip. The provided n type impurity region and drain electrode causes a depletion layer of a substrate to be terminated without needing an additional conventional annular region or shield metal. This is because the n type impurity region and the drain electrode also function as the annular region and the shield metal, respectively. With this configuration, a MOSFET with the up-drain structure having necessary components is obtained, while avoiding a reduction of the device region or an increase of the chip area.

REFERENCES:
patent: 6563169 (2003-05-01), Miyakoshi et al.
patent: 2006/0030142 (2006-02-01), Grebs et al.
patent: 2008/0237631 (2008-10-01), Watanabe
patent: 2002-353452 (2002-12-01), None
patent: 2005-101334 (2005-04-01), None

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