Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2009-01-29
2010-06-08
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S666000, C257S532000
Reexamination Certificate
active
07732919
ABSTRACT:
Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).
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Ashida Kisho
Kawano Kenya
Machida Yuichi
Shimizu Ichio
Clark S. V
Miles & Stockbridge P.C.
Renesas Technology Corp.
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