Semiconductor device

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C349S042000

Reexamination Certificate

active

07859606

ABSTRACT:
It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

REFERENCES:
patent: 5187604 (1993-02-01), Taniguchi et al.
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5640067 (1997-06-01), Yamauchi et al.
patent: 5684365 (1997-11-01), Tang et al.
patent: 5804878 (1998-09-01), Miyazaki et al.
patent: 5897328 (1999-04-01), Yamauchi et al.
patent: 5929527 (1999-07-01), Yamazaki et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6166396 (2000-12-01), Yamazaki
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6323051 (2001-11-01), Shimada
patent: 6414730 (2002-07-01), Akamatsu et al.
patent: 6433842 (2002-08-01), Kaneko et al.
patent: 6448612 (2002-09-01), Miyazaki et al.
patent: 6495857 (2002-12-01), Yamazaki
patent: 6567145 (2003-05-01), Kaneko et al.
patent: 6608353 (2003-08-01), Miyazaki et al.
patent: 6825488 (2004-11-01), Yamazaki et al.
patent: 6844628 (2005-01-01), Yamazaki et al.
patent: 6853083 (2005-02-01), Yamauchi et al.
patent: 6861670 (2005-03-01), Ohtani et al.
patent: 6940094 (2005-09-01), Yamazaki et al.
patent: 6979882 (2005-12-01), Yamazaki et al.
patent: 6992435 (2006-01-01), Yamauchi et al.
patent: 7071037 (2006-07-01), Suzawa et al.
patent: 7154218 (2006-12-01), Murakami et al.
patent: 2001/0001496 (2001-05-01), Yamazaki
patent: 2002/0024298 (2002-02-01), Fukunaga
patent: 2002/0110941 (2002-08-01), Yamazaki et al.
patent: 2002/0163049 (2002-11-01), Yamazaki et al.
patent: 2002/0171085 (2002-11-01), Suzawa et al.
patent: 2002/0179969 (2002-12-01), Miyazaki et al.
patent: 2002/0179972 (2002-12-01), Yamazaki et al.
patent: 2002/0179973 (2002-12-01), Yamazaki et al.
patent: 2003/0054653 (2003-03-01), Yamazaki et al.
patent: 2004/0023445 (2004-02-01), Miyazaki et al.
patent: 2004/0051102 (2004-03-01), Miyazaki et al.
patent: 2004/0241931 (2004-12-01), Akimoto et al.
patent: 2005/0056848 (2005-03-01), Yamazaki et al.
patent: 2005/0145847 (2005-07-01), Miyazaki et al.
patent: 2005/0146262 (2005-07-01), Yamauchi et al.
patent: 2005/0206008 (2005-09-01), Yamazaki et al.
patent: 2006/0006794 (2006-01-01), Sakakura et al.
patent: 06-202146 (1994-07-01), None
patent: 06-232129 (1994-08-01), None
patent: 07-312425 (1995-11-01), None
patent: 08-330600 (1996-12-01), None
patent: 09-045927 (1997-02-01), None
patent: 10-032202 (1998-02-01), None
patent: 2001-281694 (2001-10-01), None
patent: 2001-281704 (2001-10-01), None
patent: 2004-006974 (2004-01-01), None
International Search Report re application No. PCT/JP2005/017223, dated Dec. 27, 2005.
Written Opinion re international application No. PCT/JP 2005/017223, dated Dec. 27, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4220937

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.