Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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Details

257750, 257758, 257767, 257775, 257781, 257784, 257786, 257736, 257691, 361748, 174261, H01L 2940

Patent

active

061664421

ABSTRACT:
A semiconductor device is comprised of a first wire that has a plurality of via holes formed in the vicinity of an end thereof and that is connected to a conductor of a different layer through the via holes, and a plurality of slits that are provided parallel to the direction in which the first wire extends and that split the first wire into a plurality of second wires over a predetermined distance from the end thereof. Another semiconductor device is comprised of a first wire, a second wire that is on a layer different from that of the first wire and that extends in a direction at right angles to the first wire, a connection area where a portion in the vicinity of an end of the first wire intersects with a portion in the vicinity of an end of the second wire, a plurality of first slits that are provided parallel to the direction in which the first wire extends and that divide the first wire into a plurality of third wires over only a predetermined distance from an end of the first wire, and a plurality of second slits that are provided parallel to the direction in which the second wire extends and that divide the second wire into a plurality of fourth wires over only a predetermined distance from an end of the second wire, and a plurality of via holes that are formed in the connection area and that connect the plurality of third wires and the plurality of fourth wires.

REFERENCES:
patent: 3270399 (1966-09-01), Ohntrup
patent: 5329162 (1994-07-01), Nadaoka
patent: 5498909 (1996-03-01), Hasunuma et al.
patent: 5506450 (1996-04-01), Lee et al.
patent: 5723908 (1998-03-01), Fuchida et al.
patent: 5955788 (1999-09-01), Iwasa

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