Semiconductor device

Details Semiconductor device Semiconductor device

2008-08-08

2010-12-28

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

C257SE27016

Reexamination Certificate

active

07859083

ABSTRACT:
A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device.

REFERENCES:
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 6229180 (2001-05-01), Yoshida et al.
patent: 6580121 (2003-06-01), Hisamoto
patent: 2006/0246650 (2006-11-01), Williams et al.
patent: 10-321857 (1998-12-01), None
patent: 2000-294778 (2000-10-01), None
patent: 2001-257349 (2001-09-01), None
patent: 2006-093505 (2006-04-01), None
Collins English Dictionary, HarperCollins Publisher 2000, Gate—9. The electrode region or regions in a field-effect transistor that is biased to control the conductivity of the channel between the source and drain See on http://www.xreferplus.com/entry/hcengdict/gate—1.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4213231