Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode
Reexamination Certificate
2008-08-08
2010-12-28
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
C257SE27016
Reexamination Certificate
active
07859083
ABSTRACT:
A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device.
REFERENCES:
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 6229180 (2001-05-01), Yoshida et al.
patent: 6580121 (2003-06-01), Hisamoto
patent: 2006/0246650 (2006-11-01), Williams et al.
patent: 10-321857 (1998-12-01), None
patent: 2000-294778 (2000-10-01), None
patent: 2001-257349 (2001-09-01), None
patent: 2006-093505 (2006-04-01), None
Collins English Dictionary, HarperCollins Publisher 2000, Gate—9. The electrode region or regions in a field-effect transistor that is biased to control the conductivity of the channel between the source and drain See on http://www.xreferplus.com/entry/hcengdict/gate—1.
Kobayashi Takashi
Niimura Yasushi
Nishimura Takeyoshi
Yamada Tadanori
Dickey Thomas L
Fuji Electric Systems Co., Ltd.
Rossi Kimms & McDowell LLP
Yushin Nikolay
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