Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2009-05-22
2010-11-16
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S686000, C257S737000, C438S740000, C438S800000
Reexamination Certificate
active
07834455
ABSTRACT:
The reliability of a semiconductor device which has the semiconductor components which were mounted on the same surface of the same substrate via the bump electrodes with which height differs, and with which package structure differs is improved. Semiconductor component2of WPP structure is mounted on the main surface of the interposer substrate which forms a semiconductor device via a plurality of bump electrodes. Semiconductor component3of CSP structure is mounted on the main surface of an interposer substrate via a plurality of bump electrodes with larger diameter and contiguity pitch than the above-mentioned bump electrode. And under-filling4aand4bmutually different, are filled up between the facing surfaces of this interposer substrate and semiconductor components2, and between the facing surfaces of the interposer substrate and semiconductor components3, respectively.
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Betsui Takafumi
Imasu Satoshi
Sugimura Takahiro
Sugita Norihiko
Dang Phuc T
Mattingly & Malur, P.C.
Renesas Electronics Corporation
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