Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-10-03
2010-10-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33002, C257SE33013
Reexamination Certificate
active
07816702
ABSTRACT:
There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
REFERENCES:
patent: 6570187 (2003-05-01), Pautrat et al.
patent: 6683898 (2004-01-01), Østergaard et al.
patent: 2007/0145394 (2007-06-01), Shimizu et al.
patent: 2008/0128713 (2008-06-01), Saito et al.
patent: 2008/0179605 (2008-07-01), Takase et al.
patent: 2008/0197362 (2008-08-01), Hisamoto et al.
patent: 2009/0059406 (2009-03-01), Powers et al.
patent: 2002-536850 (2002-10-01), None
patent: 2004-319668 (2004-11-01), None
patent: 2007-294628 (2007-11-01), None
Chan et al., “Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser”, Applied Physics Letters, vol. 88, pp. 143508-1-143508-3 (Apr. 5, 2006).
Canham “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”, Applied Physics Letters, vol. 57, 199, pp. 1046-1048 (Jul. 1990).
Coffa “High efficiency and fast modulation of Er-droped light emitting Si diodes”, Applied Physics Letters, vol. 69, pp. 2077-2079, (Jul. 1996).
Iacona, et al., “Silicon nanocrystals and Er3+ions in an optical microavity”, Applied Physics Letters, pp. 8354-8356 of vol. 89 in (Mar. 2001).
Coffa, “Light from Silicon”, IEEE Spectrum, pp. 44-49 of vol. 89 in (Oct. 2005).
Fang et al., “A Continuous-Wave Hybrid AIGInAs-Silicaon Evanescent Laser”, IEEE Photonics Technology Letters, pp. 1143-1145 of vol. 18, (May 2006).
Aoki Masahiro
Arimoto Hideo
Saito Shin-ichi
Sakuma Noriyuki
Uchiyama Hiroyuki
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Patton Paul E
Smith Zandra
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4208828