Semiconductor device

Details Semiconductor device Semiconductor device

2008-05-30

2010-10-26

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S690000, C257S691000, C257S700000, C257S706000, C257S712000, C257S713000, C257S720000, C257S722000, C257S723000, C257SE33075, C257SE31131, C257SE23051, C257SE23080, C257SE23101, C257SE23103

Reissue Patent

active

RE041869

ABSTRACT:
In the semiconductor device, a control power MOSFET chip2is disposed on the input-side plate-like lead5,and the drain terminal DT1is formed on the rear surface of the chip2,and the source terminal ST1and gate terminal GT1are formed on the principal surface of the chip2,and the source terminal ST1is connected to the plate-like lead for source12.Furthermore, a synchronous power MOSFET chip3is disposed on the output-side plate-like lead6,and the drain terminal DT2is formed on the rear surface of the chip3and the output-side plate-like lead6is connected to the drain terminal DT2.Furthermore, source terminal ST2and gate terminal GT2are formed on the principal surface of the synchronous power MOSFET chip3,and the source terminal ST2is connected to the plate-like lead for source13.The plate-like leads for source12and13are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM1.

REFERENCES:
patent: 6693350 (2004-02-01), Teshima et al.
patent: 6891265 (2005-05-01), Mamitsu et al.
patent: 6917103 (2005-07-01), Hirano et al.
patent: 6960825 (2005-11-01), Mamitsu et al.
patent: 6963133 (2005-11-01), Teshima
patent: 7400002 (2008-07-01), Kajiwara et al.
patent: 7586180 (2009-09-01), Hata et al.
patent: 2001/0033477 (2001-10-01), Inoue et al.
patent: 2002/0027276 (2002-03-01), Sakamoto et al.
patent: 2002/0195704 (2002-12-01), Chan et al.
patent: 2003/0132530 (2003-07-01), Teshima et al.
patent: LO H6-2714 (1994-01-01), None
patent: LO H6-291223 (1994-10-01), None
patent: LO 2001-308263 (2001-02-01), None
patent: LO 2001-291823 (2001-10-01), None
patent: LO 2001-320005 (2001-11-01), None
patent: LO 2001-352023 (2001-12-01), None
patent: LO 2002-26215 (2002-01-01), None
patent: LO 2002-083915 (2002-03-01), None
patent: 2002-110893 (2002-04-01), None
patent: LO 2002-110893 (2002-04-01), None
patent: 2003-046036 (2003-02-01), None
patent: LO 2003-046036 (2003-02-01), None
patent: WO 2004/008532 (2004-01-01), None
Notice of Rejection: JP Pat. Appln. 2004-020474; mailed May 8, 2007; pp. 1-2.
Notice of Rejection: JP Pat. Appln. 2004-020474; mailed Sep. 4, 2007; pp. ,, 1-4.
First Notice of rejection: Chinese Pat. Appln. 2004-101048396; Apr. 20, 2007; pp. 1-8, pp. 1-2.
Explanation on an Accelerated Examination of JP 2007-318290; pp. 1-38.
Explanation on an Accelerated Examination of JP 2007-287544; pp. 1-38.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4199399