Semiconductor device

Details Semiconductor device Semiconductor device

2006-04-20

2010-02-16

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE29343, C257SE23144

Reexamination Certificate

active

07663207

ABSTRACT:
A semiconductor device includes a capacitor with an MIM structure, by which the dimensional accuracy of the device is improved, and a stable capacitance value is given. The semiconductor device100includes: a semiconductor substrate102; a capacitor forming region130in which an MIM capacitor is formed, which has an insulating interlayer104formed on the semiconductor substrate102, a first electrode110, and a second electrode112, and the first electrode110and the second electrode112are arranged facing each other through the insulating interlayer104; and a shielding region132which includes a plurality of shielding electrodes114formed in the outer edge of the capacitor forming region130and, at the same time, set at a predetermined potential in the same layer as that of the MIM capacitor on the semiconductor substrate102, and shields the capacitor forming region130from other regions.

REFERENCES:
patent: 2002/0047154 (2002-04-01), Sowlati et al.
patent: 2003/0089937 (2003-05-01), Yamauchi et al.
patent: 2004/0152258 (2004-08-01), Kiyotoshi
patent: 2005/0145987 (2005-07-01), Okuda et al.
patent: 05-090489 (1993-04-01), None
patent: 2001-196372 (2001-07-01), None

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