Semiconductor device

Details Semiconductor device Semiconductor device

2008-06-03

2010-11-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185230

Reexamination Certificate

active

07830715

ABSTRACT:
A semiconductor device includes a semiconductor substrate including an element region which is surrounded by an element isolation insulation layer, a transistor including a gate electrode which is provided on the element region, and a source region and a drain region which are provided in the first element region, a first auxiliary wiring layer and a second auxiliary wiring layer which extend in a channel length direction and are provided on the element isolation insulation layer such that the first transistor is interposed between the first auxiliary wiring layer and the second auxiliary wiring layer, and a control circuit which sets, while the first transistor is in an ON state, the first auxiliary wiring layer and the second auxiliary wiring layer at a first voltage of the same polarity as a gate voltage of the first transistor that is in the ON state.

REFERENCES:
patent: 7035143 (2006-04-01), Lee
patent: 7095656 (2006-08-01), Lee
patent: 7119413 (2006-10-01), Kutsukake
patent: 7161837 (2007-01-01), Park
patent: 7272042 (2007-09-01), Nakai
patent: 2006-59978 (2006-03-01), None

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