Semiconductor device

Details Semiconductor device Semiconductor device

2007-11-14

2010-06-01

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29242

Reexamination Certificate

active

07728354

ABSTRACT:
A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0<y<1, x<y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).

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Masayuki Kuroda et al., “Normally-Off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-Plane Sapphire”, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, Kobe, 2005, pp. 740-741.
Masayuki Kuroda, et al., “Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire”, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, Kobe, Sep. 2005, pp. 470-471.

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