Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-23

2010-06-01

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S209000, C257S665000, C257SE21529, C257SE21596, C257SE23150

Reexamination Certificate

active

07728406

ABSTRACT:
A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.

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patent: 8-321549 (1996-12-01), None
patent: 2002-134616 (2002-05-01), None
patent: 2006-73891 (2006-03-01), None

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