Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2008-04-23
2010-10-12
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257SE23151, C257S686000, C257S723000, C257S781000, C438S107000, C438S109000
Reexamination Certificate
active
07812446
ABSTRACT:
A method of manufacturing a semiconductor device including a PMOS transistor and a NMOS transistor is described. The method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.
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Chu Chris
NEC Electronics Corporation
Young & Thompson
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