Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-01-31
2010-12-28
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE23066
Reexamination Certificate
active
07859004
ABSTRACT:
The present invention provides a semiconductor device having a structure which is suitable for reduction in thickness and weight.The semiconductor device1comprises a housing12which has the recess24in the front surface14, the pair of lead electrodes20which have the distal ends34exposed in the recess24, protrude from the external surface of the housing12and are bent along the bottom surface16of the housing12, and a semiconductor element36which is housed in the recess24and is electrically connected to the pair of lead electrodes20. The housing12has the grooves30which are formed on the pair of side surfaces18which adjoin the front surface14and the bottom surface16on the right and left sides so as to penetrate the housing12from the top surface28toward the bottom surface16of the housing12. The grooves30preferably have width substantially equal to the thickness of the lead electrode20. The grooves30are more preferably formed to be flush with the distal ends34of the lead electrode20.
REFERENCES:
patent: D497349 (2004-10-01), Hoshiba
patent: 2004/0046242 (2004-03-01), Asakawa
patent: 2006/0151793 (2006-07-01), Nagai
patent: 2004-363537 (2004-12-01), None
Birch Stewart Kolasch & Birch, LLP.
Nichia Corporation
Pert Evan
Soderholm Krista
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