Semiconductor device

Details Semiconductor device Semiconductor device

1977-12-13

1978-11-28

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 35, 357 48, 148186, 148187, H01L 2702

Patent

active

041278640

ABSTRACT:
A semiconductor device having a bipolar transistor of the lateral type, preferably a pnp-transistor which is provided in a homogeneously doped semiconductor layer and which may be provided both in an n-type and in a p-type semiconductor layer and of which the base comprises a highly doped contact region and an associated substantially non-depleted active base region, while the emitter zone is situated substantially entirely within the active base region. Herewith, high frequency complementary transistors can be formed in a single epitaxial layer. The invention furthermore comprises a suitable method of manufacturing said transistor in which use is made of underetching.

REFERENCES:
patent: 3766446 (1973-10-01), Tarui
patent: 3885999 (1975-05-01), Frisaroli et al.
patent: 3913123 (1975-10-01), Masaki et al.

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