Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-09-19
2010-11-23
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S678000, C257SE23169, C257SE23178
Reexamination Certificate
active
07838978
ABSTRACT:
A semiconductor device and method is disclosed. One embodiment provides a substrate and a first semiconductor chip applied over the substrate. A first electrically conductive layer is applied over the substrate and the first semiconductor chip. A first electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the first electrically insulating layer.
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Chinese Office Action mailed Feb. 5, 2010.
Ewe Henrik
Mahler Joachim
Mengel Manfred
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Mandala Victor A
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