Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-28

2010-06-22

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S194000, C257S335000, C257S339000, C257S342000

Reexamination Certificate

active

07741655

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface and a semiconductor element having an insulated gate field effect portion formed in the semiconductor substrate. The semiconductor element includes an n−region, an n-type source region, a p-type base region, an n+region, and a gate electrode. The n−region and the n-type source region are formed in the main surface. The p-type base region is formed in the main surface adjacent to the n-type source region. The n+region is formed in the main surface adjacent to the p-type base region and opposed to the n-type source region with the p-type base region being interposed, and has an impurity concentration higher than the n−region. The n−region is formed in the main surface adjacent to the p-type base region and to the n+region.

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