Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2008-05-16
2010-02-23
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257SE21375, C257SE29044, C257SE29187, C257S552000, C257S565000
Reexamination Certificate
active
07667295
ABSTRACT:
In a semiconductor device including a bipolar transistor, a base region has a two layer structure including a first base region, and a second base region which is provided around the first base region and has a lower impurity density than that of the first base region and has a shallower depth than that of the first base region.
REFERENCES:
patent: 5786622 (1998-07-01), Ronkainen
patent: 2-102541 (1990-04-01), None
patent: 2002-26161 (2002-01-01), None
patent: 2003-224252 (2003-08-01), None
Gurley Lynne A.
Kearney Naima J
McGinn IP Law Group PLLC
NEC Electronics Corporation
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