Semiconductor device

Details Semiconductor device Semiconductor device

2008-10-22

2010-12-14

Chu, Chris (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE29116, C257S275000, C257S289000, C257S365000, C438S193000, C438S284000

Reexamination Certificate

active

07851832

ABSTRACT:
Electrode placement which applies easy heat dispersion of a semiconductor device with high power density and high exothermic density is provided for the semiconductor device including: a gate electrode, a source electrode, and a drain electrode which are placed on a first surface of a substrate10, and have a plurality of fingers, respectively; gate terminal electrodes G1, G2, . . . , G4, source terminal electrodes S1, S2, . . . , S5, and a drain terminal electrode D which are placed on the first surface, and governs a plurality of fingers, respectively every the gate electrode, the source electrode, and the drain electrode; active areas AA1, AA2, . . . , AA5placed on the substrate of the lower part of the gate electrode, the source electrode, and the drain electrode; a non-active area (BA) adjoining the active areas and placed on the substrate; and VIA holes SC1, SC2, . . . , SC5connected to the source terminal electrodes, wherein the active areas are divided into a plurality of stripe shapes, and the fishbone placement of the gate electrode is performed.

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