Semiconductor device

Details Semiconductor device Semiconductor device

2009-08-03

2010-11-30

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000

Reexamination Certificate

active

07843066

ABSTRACT:
The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.

REFERENCES:
patent: 6908841 (2005-06-01), Burrell et al.
patent: 2004/0058520 (2004-03-01), Burrell et al.
patent: 2001-267323 (2001-09-01), None

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