Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-05-24
1998-03-17
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, H01L 3300
Patent
active
057290300
ABSTRACT:
A semiconductor device includes an InP substrate; a channel layer in which electrons, as charge carriers, travel; and an Al.sub.x1 Ga.sub.1-x1 As.sub.y1 P.sub.z1 Sb.sub.1-y1-z1 (0.ltoreq.x1.ltoreq.1, 0.ltoreq.y1<1, 0<z1.ltoreq.1) electron supply layer for supplying electrons to the channel layer. The electron supply layer has an electron affinity smaller than that of the channel layer and is doped with a dopant impurity producing n type conductivity. Since n type AlGaAsPSb is thermally stable, its electrical characteristics are not changed by heat treatment at about 350.degree. C., resulting in a thermally stable and highly reliable HEMT in which the characteristics hardly change with the passage of time during fabrication and operation. Further, a heterostructure including an electron supply layer and a channel layer and having a desired energy band structure is easily produced with a wide degree of freedom in designing the device.
REFERENCES:
Hayafuji et al., "Thermal Stability Of A1InAs/GaInAs/InP Hetero-structures", Applied Physics Letters, vol. 66, No. 7, 1995, pp. 863-865.
Miya et al., "AlGaAsSb Buffer/Barrier Layer On GaAs Substrate For InAs Channel With High Electron Properties", Proceedings of the 7th Annual Conference on Indium Phosphide and Related Materials, 1995, pp. 440-443.
Hayafuji Norio
Yamamoto Yoshitsugu
Meier Stephen
Mitsubishi Denki & Kabushiki Kaisha
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