Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2008-06-19
2009-08-25
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S758000, C257S762000, C257S766000, C257S773000
Reexamination Certificate
active
07579696
ABSTRACT:
A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material formed in the multilayer interconnection structure like surrounding the effective wire; a protective film configured to protect a final surface of the multilayer interconnection structure; and a second reinforcing material formed at a position in contact with the protective film and also between an area in which the effective wire is formed and a chip area end, the second reinforcing material being constituted by a film pattern whose Young's modulus is larger than that of a conductor constituting the first electrode pad and that of a conductor constituting the first reinforcing material.
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Hasunuma Masahiko
Ito Sachiyo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Vu Hung
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