Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-07-21
2009-11-03
Garber, Charles D. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S291000, C257SE29117
Reexamination Certificate
active
07612376
ABSTRACT:
A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and by designing a channel length and a film thickness of a gate insulating film of the TFT according to characteristics required by circuits, it is possible to form a high frequency driving circuit and a low frequency driving circuit on the same substrate.
REFERENCES:
patent: 4951226 (1990-08-01), Sasaki
patent: 5250931 (1993-10-01), Misawa
patent: 5396084 (1995-03-01), Matsumoto
patent: 5403762 (1995-04-01), Takemura
patent: 5403772 (1995-04-01), Zhang
patent: 5414443 (1995-05-01), Kanatani
patent: 5550070 (1996-08-01), Funai
patent: 5563426 (1996-10-01), Zhang
patent: 5572046 (1996-11-01), Takemura
patent: 5604360 (1997-02-01), Zhang
patent: 5638085 (1997-06-01), Hush
patent: 5719799 (1998-02-01), Isashi
patent: 5739549 (1998-04-01), Takemura et al.
patent: 5744824 (1998-04-01), Kousai
patent: 5748441 (1998-05-01), Loritz
patent: 5811587 (1998-09-01), Moreau
patent: 5818068 (1998-10-01), Sasaki
patent: 5844538 (1998-12-01), Shiraki
patent: 5888857 (1999-03-01), Zhang
patent: 5932893 (1999-08-01), Miyanaga
patent: 5959599 (1999-09-01), Hirakata
patent: 6140165 (2000-10-01), Zhang
patent: 6160269 (2000-12-01), Takemura et al.
patent: 6323071 (2001-11-01), Zhang
patent: 6338991 (2002-01-01), Zhang
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6413805 (2002-07-01), Zhang
patent: 6417057 (2002-07-01), Takemura et al.
patent: 6475840 (2002-11-01), Miyanaga
patent: 6479331 (2002-11-01), Takemura
patent: 6690063 (2004-02-01), Takemura et al.
patent: 6806125 (2004-10-01), Zhang
patent: 6872605 (2005-03-01), Takemura
patent: 6875628 (2005-04-01), Zhang
patent: 2002/0037609 (2002-03-01), Zhang
patent: 2002/0163043 (2002-11-01), Zhang
patent: 2003/0036222 (2003-02-01), Takemura
patent: 2005/0020006 (2005-01-01), Zhang
patent: 2005/0153488 (2005-07-01), Takemura
patent: 05-335573 (1993-12-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-045839 (1995-02-01), None
patent: 07-231100 (1995-08-01), None
patent: 07-335897 (1995-12-01), None
patent: 07-335904 (1995-12-01), None
patent: 08-006053 (1996-01-01), None
patent: 08-076142 (1996-03-01), None
patent: 08-181325 (1996-07-01), None
Koyama Jun
Ohtani Hisashi
Yamazaki Shunpei
Fish & Richardson P.C.
Garber Charles D.
Isaac Stanetta D
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4137624