Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S537000, C257S538000

Reexamination Certificate

active

07615844

ABSTRACT:
A semiconductor device is provided that includes: a base insulating film; a metal thin-film resistor that is provided on the base insulating film; a lower-layer insulating film that is formed under the base insulating film; and a wiring pattern that is formed on the lower-layer insulating film. In this semiconductor device, the base insulating film is formed on the lower-layer insulating film and the wiring pattern, and connecting holes are formed in the base insulating film located on the wiring patterns. The metal thin-film resistor has at least two belt-like portions and a return portion that continues to the belt-like portions. The belt-like portions are located at a distance from the region on the wiring pattern. The return portion connects at least two belt-like portions in a position at a distance from the region on the wiring pattern. The return portion is formed in a connecting hole via the region on the wiring pattern.

REFERENCES:
patent: 5004704 (1991-04-01), Maeda et al.
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 58-148443 (1983-09-01), None
patent: 61-100956 (1986-05-01), None
patent: 2699559 (1997-09-01), None
patent: 2932940 (1999-05-01), None
patent: 3185677 (2001-05-01), None
patent: 2002-124639 (2002-04-01), None
patent: 2002-261237 (2002-09-01), None

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