Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-02-17
2009-02-03
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S786000
Reexamination Certificate
active
07485972
ABSTRACT:
Provided is a semiconductor device which includes a conductive bonding pad formed on a semiconductor substrate of the first conduction type via an insulating film and a diffusion layer of the second conduction type formed on a surface of the semiconductor substrate under the bonding pad. Characteristics do not deteriorate even when a breakdown occurs during wire bonding.
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Ichijo Hisao
Ikuta Teruhisa
Ogura Hiroyoshi
Sato Yoshinobu
Terashita Toru
Clark S. V
Panasonic Corporation
Steptoe & Johnson LLP
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