Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-12-19
2009-06-30
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S539000, C257SE27016, C257SE29066
Reexamination Certificate
active
07554173
ABSTRACT:
A semiconductor device accurately monitoring temperature of a semiconductor chip even in a noisy environment, while not requiring a highly accurate detection circuit. A PTC element is bonded onto an IGBT chip. Then, a constant current flows from a constant current source through the PTC element, and an output voltage of the PTC element is detected by a voltage monitor. When output voltage increases, a voltage applied to a gate electrode by a detection circuit is decreased. Since the PTC element is directly arranged on the IGBT chip, the temperature of the IGBT chip can be monitored with high accuracy. Further, since the change in output voltage of the PTC element per 1° C. is large, a highly accurate detection circuit is not necessary, thereby allowing accurate monitoring of the temperature of the IGBT chip even in a noisy environment.
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Fukuhara Katsuhiko
Inaba Yoshitsugu
Inaguchi Takashi
Mitsuhashi Takao
Ohi Takeshi
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Pham Hoai V
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